IRF1404SL说明书PDF资料供应代理英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1404SL	文件：300 bytes Page：1 Pages	HEXFET® Power MOSFET Description\nSeventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know	Infineon 英飞凌	Infineon
IRF1404SPBF	文件：279.7 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat 文件：279.7 Kbytes 页数：11 Pages	IRF	IRF
IRF1404SPBF	文件：3.89112 Mbytes Page：10 Pages	HEXFET짰 Power MOSFET Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature 文件：3.89112 Mbytes 页数：10 Pages	KERSEMI	KERSEMI
IRF1404SPBF	文件：279.7 Kbytes Page：11 Pages	Advanced Process Technology 文件：279.7 Kbytes 页数：11 Pages	IRF	IRF

更多IRF1404SL供应商更新时间2026-1-21 14:00:00