红外发射管

Everlight

台湾亿光

Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Repetitive Avalanche Rated ● Isolated Central Mounting Hole ● Fast S

文件：168.34 Kbytes 页数：6 Pages

IRF

Standard Power MOSFET - N-Channel Enhancement Mode

N-Channel Enhancement Mode Standard Power MOSFET Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Applications • Switch-mode and resonant-mode po

文件：47.02 Kbytes 页数：2 Pages

IXYS

艾赛斯

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Sw

文件：1.56832 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司