IR2136S中文资料600 V three-phase gate driver IC with enable, fault reporting and over current protection数据手册Infineon规格书

描述 Description

600 V three phase gate driver IC for IGBTs and MOSFETs with typical 0.2 A source and 0.35 A sink current in SOIC-28 wide body package with junction-isolated level-shift technology. For improved negative transient voltage robustness up to -100 V and 50% lower level shift losses, please check our Infineon SOI 600 V three phase gate driver 6EDL04I06PT, 6EDL04I06NT, 6EDL04N06PT.  Or 6EDL04N02PR which is a 200 V, 3-phase gate driver available in TSSOP-28 package。

特性 Features

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V (IR2136/IR21368), 11.5 V to 20 V (IR21364), or 12 V to 20 V (IR21363/IR21365/IR21366)
• Under-voltage lockout for all channels
• Over-current shutdown turns off all six drivers
• Independent 3 half-bridge drivers
• Matched propagation delay for all channels
• Cross-conduction prevention logic
• Low side output out of phase with inputs, high side outputs out of phase. (IR2136/IR21363/IR21365/IR21366/IR21368)
• Low side and high side outputs in phase with inputs. (IR21364)
• 3.3 V logic compatible
• Lower di/dt gate drive for better noise immunity
• Externally programmable delay for automatic fault clear
• LEAD-FREE and RoHS Compliant

优势:

应用 Application

• Power Tools
• Home Appliances
• Room air conditioners 
• Refrigerator 
• Vacuum Cleaner
• Washing Machine

• Light Electric Vehicle
• Motor Control and Drives
• Micro/Mini Inverter Drives

简介

IR2136S属于集成电路（IC）的栅极驱动器。由制造生产的IR2136S栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。