Description

The IR2125(S) is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.

Features

• Floating channel designed for bootstrap operation

   Fully operational to +500V

   Tolerant to negative transient voltage

   dV/dt immune

• Gate drive supply range from 12 to 18V

• Undervoltage lockout

• Current detection and limiting loop to limit driven

   power transistor current

• Error lead indicates fault conditions and programs

   shutdown time

• Output in phase with input

• 2.5V, 5V and 15V input logic compatible

• Also available LEAD-Free

IR2125属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IR2125栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。