IR2112S中文资料600 V high-side and low-side gate driver IC with shutdown数据手册Infineon规格书

描述 Description

600 V High and Low Side Driver IC with typical 0.25 A source and 0.5 A sink currents in 16 Lead SOICWB package for IGBTs and MOSFETs. Also available in 14 Lead PDIP.

特性 Features

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage
• dV/dt immune
• Gate drive supply range from 10 to 20 V
• Undervoltage lockout for both channels
• 3.3 V logic compatible
• Separate logic supply range from 3.3 V to 20 V
• Logic and power ground +/- 5 V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

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简介

IR2112S属于集成电路（IC）的栅极驱动器。由制造生产的IR2112S栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。