IR2011中文资料200 V 高侧和低侧栅极驱动器 IC数据手册Infineon规格书

描述 Description

200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

特性 Features

• Floating Channel designed for bootstrap operation, dV/dt immune
• Fully operational to 200 V Tolerant to negative transient voltage
• Tolerant to negative tansient voltage
• dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Independent low and high side channels
• Input logic HIN/LIN active high
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels

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简介

IR2011属于集成电路（IC）的栅极驱动器。由制造生产的IR2011栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。