红外发射管

ICP America

Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in

文件：173.36 Kbytes 页数：6 Pages

IRF

0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：52.32 Kbytes 页数：6 Pages

INTERSIL

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

文件：360.56 Kbytes 页数：6 Pages

HARRIS