IPT65R190CFD7中文资料The 650 V CoolMOS™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies数据手册Infineon规格书

特性 Features

优势:
• Excellent hard-commutation ruggedness
• Extra safety margin for designs with increased bus voltage
• Enabling increased power density
• Outstanding light-load efficiency in industrial SMPS applications
• Improved full-load efficiency in industrial SMPS applications
• Price competitiveness compared to alternative offerings in the market

应用 Application

• Fast EV charging
• Server power supply
• Solutions for solar energy systems
• Telecom infrastructure

简介

IPT65R190CFD7属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的IPT65R190CFD7晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。