英飞凌对谐振高功率拓扑的回答

\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topologies\n• Highest efficiency with outstanding ease-of-use/performance trade-off\n• Enabling increased power density solutions;

Infineon

英飞凌

丝印：60R075F7；Package：PG-HSOF-8；600V CoolMOS짧 CFD7 Power Transistor

文件：1.29047 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS??CFD7 Power Transistor

文件：1.05201 Mbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Potential applications Suitable for Soft S

文件：1.18538 Mbytes 页数：14 Pages

Infineon

英飞凌

3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC

Scope and purpose This document introduces a complete Infineon Technologies AG system solution for a 3300 W bi-directional DC-DC converter that achieves 98 percent efficiency in buck mode and 97 percent in boost mode. The EVAL_3K3W_BIDI_PSFB board is a DC-DC stage with telecom-level output real

文件：4.68189 Mbytes 页数：44 Pages

Infineon

英飞凌