丝印：034N15N6；Package：PG-HSOF-8；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.16534 Mbytes 页数：13 Pages

Infineon

英飞凌

N-Channel Power MOSFET

IPT034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.\n OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. • Very low RDS(on)\n• 20% lower FOMg than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• High current rating\n• Max Tj of 175°C and MSL1\n\n优势:\n• Low conduction and switching losses\n• St;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.2414 Mbytes 页数：13 Pages

Infineon

英飞凌

SAMTEC/砷泰
汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司

SAMTEC/砷泰
汽车电子连接器

SAMTEC/砷泰

上传：天津市博通航睿技术有限公司