丝印：034N15N6；Package：PG-HDSOP-16；MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.2414 Mbytes 页数：13 Pages

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OptiMOS ™ 6 功率 MOSFET 150 V 正常电平，采用 TOLT 封装，用于顶部冷却

IPTC034N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market.\n OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.\n Com • Very low RDS(on)\n• 20% lower FOMg than OptiMOS™ 5\n• Industry's lowest Qrr in 150 V\n• Improved diode softness vs OptiMOS™ 5\n• Tight Vgs(th) spread of +/-500 mV\n• High avalanche ruggedness\n• Top-side cooling\n• High current rating\n• Max Tj of 175°C and MSL1\n\n优势:\n• Low conduction and sw;

Infineon

英飞凌

MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

Features • N‑channel • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020

文件：1.16534 Mbytes 页数：13 Pages

Infineon

英飞凌

Infineon
TO-251AA-3

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上传：深圳市宇集芯电子有限公司

5000
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5000

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