首页 >IPSH4N03LA-G>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPSH4N03LA-G | OPTIMOS 2 POWER - TRANSISTOR Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant 文件：305.11 Kbytes 页数：9 Pages | INFINEON 英飞凌 | INFINEON | |
Dual N-Channel MOSFET 文件：1.70249 Mbytes 页数：6 Pages | KEXIN 科信电子 | KEXIN | ||
Power MOSFET 4 A, 30 V, N?묬hannel SO?? Dual 文件：126.33 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Power MOSFET 4 A, 30 V, N?묬hannel SO?? Dual 文件：126.33 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI |
详细参数
- 型号：
IPSH4N03LA-G
- 制造商：
INFINEON
- 制造商全称：
Infineon Technologies AG
- 功能描述：
OPTIMOS 2 POWER - TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO251-3 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO251-3 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO251-3 |
7000 |
询价 | |||
LAIRD |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
LAIRD |
2023+ |
5.7x5.7x2.0 |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
Laird |
20+ |
电感器 |
682000 |
电感原装优势主营型号-可开原型号增税票 |
询价 | ||
LAIRD |
24+ |
5.7x5.7x2.0mm |
60811 |
专业电感电容电阻一站式配套齐可售样品 |
询价 | ||
ST |
22+ |
SMD |
16900 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST |
25+ |
SMD |
16900 |
原装，请咨询 |
询价 | ||
ST |
2511 |
SMD |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 |
更多IPSH4N03LA-G供应商
更新时间2026-1-27 10:02:00
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