IPP070N06LG规格书应用电路原装现货英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IPP070N06LG	文件：445.11 Kbytes Page：10 Pages	OptiMOS짰 Power-Transistor 文件：445.11 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon
IPP070N06LG	文件：300 bytes Page：1 Pages	OptiMOS® Power-Transistor	Infineon 英飞凌	Infineon
IPP070N06NG	文件：446.14 Kbytes Page：10 Pages	OptiMOS짰 Power-Transistor 文件：446.14 Kbytes 页数：10 Pages	Infineon 英飞凌	Infineon
NVLJWS070N06CL	文件：160.29 Kbytes Page：7 Pages	MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：160.29 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI
NVLJWS070N06CLTAG	文件：160.29 Kbytes Page：7 Pages	MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：160.29 Kbytes 页数：7 Pages	ONSEMI 安森美半导体	ONSEMI

更多IPP070N06L供应商更新时间2025-10-31 14:00:00