丝印：06N03LA；Package：TO-220-3-1；OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated

文件：347.1 Kbytes 页数：10 Pages

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OptiMOS 2 Power-Transistor

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英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：418.76 Kbytes 页数：12 Pages

Infineon

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel, logic level • Excellent gate charge x RDS(on)product (FOM) • Superior thermal resistance • 175 °C operating temperature

文件：413.86 Kbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：418.76 Kbytes 页数：12 Pages

Infineon

英飞凌