首页 >IPI045N10N3-G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IPI045N10N3-G | OptiMOS?? Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-channelenhancementmode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
100VN-ChannelMOSFET Features •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Idealforhigh-frequencyswitchingandsynchronousrectification •VDS •ID=137A •RDS(ON)(atVGS=10V) | UMWUMW 友台友台半导体 | UMW | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
2022 |
TO-262 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
INFINEON/英飞凌 |
TO-262 |
货真价实,假一罚十 |
25000 |
询价 | |||
INFINEON/英飞凌 |
22+ |
TO-262 |
40256 |
本公司只做原装进口现货 |
询价 | ||
INFINEON/英飞凌 |
22+/23+ |
TO-262 |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-262 |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
1503+ |
TO262-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon Technologies |
23+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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