IPD95R450PFD7中文资料英飞凌数据手册PDF规格书

厂商型号	IPD95R450PFD7
功能描述	MOSFET 950V CoolMOSª PFD7 SJ Power Device
丝印标识	95R450D7
封装外壳	PG-TO252-3
文件大小	996.79 Kbytes
页面数量	14 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-30 14:07:00
人工找货	IPD95R450PFD7价格和库存，欢迎联系客服免费人工找货

Features

• Integrated ultra-fast body diode

• Best-in-class reverse recovery charge Qrr

• Best-in-class FOM RDS(on) * Eoss, reduced Qg, Ciss, and Coss

• Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V

• Integrated fast body diode

• Best-in-class CoolMOS™ quality and reliability

• Fully optimized portfolio

• Best-in-class RDS(on) in THD and SMD packages

• ESD protection min. Class 2 (HBM)

Benefits

• Excellent hard commutation robustness enabling usage in resonant

topologies

• Extra safety margin for designs with increased bus voltage

• Enabling increased power density solutions

• Improved full load efficiency in industrial SMPS applications

• Price competitiveness over previous CoolMOS™ families

• Improved production yield by reducing ESD related failures