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首页>IPD60R3K3C6>芯片详情
IPD60R3K3C6
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
IPD60R3K3C6
- 功能描述:
MOSFET N-CH 650V 1.7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
无锡固电半导体股份有限公司
- 商铺:
- 联系人:
潘小姐
- 手机:
15961889150
- 询价:
- 电话:
0510-85346300
- 地址:
无锡新吴区新梅路68号
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