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IPD60R1K4C6中文资料英飞凌数据手册PDF规格书
IPD60R1K4C6规格书详情
描述 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
特性 Features
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-free plating
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom
and UPS.
产品属性
- 型号：
IPD60R1K4C6
- 功能描述：
MOSFET N-CH 650V 3.2A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-252 |
22167 |
只做原装假一赔十 |
询价 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
INFINEON/英飞凌 |
2023+ |
TO-252 |
22173 |
原厂全新正品旗舰店优势现货 |
询价 | ||
Infineon/英飞凌 |
21+ |
TO-252 |
6820 |
只做原装,质量保证 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO-252 |
11318 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
Infineon |
1931+ |
N/A |
605 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Infineon/英飞凌 |
24+ |
TO-252 |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINEON |
13+PBF |
TO-252 |
7500 |
优势 |
询价 | ||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
询价 |
