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IPD09N03LA

OptiMOS 2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03LA

OptiMOS 2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03LA

OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03LAG

OptiMOS짰2 Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03L

OptiMOS Buck converter series

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03LBG

OptiMOS짰2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IPD09N03LBG

OptiMOS짰2 Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

09N03

25VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent

PANJITPANJIT International Inc.

强茂強茂股份有限公司

09N03L

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LA

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LA

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LB

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LB

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03LBG

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

09N03S

25VN-ChannelEnhancementModeMOSFET

FEATURES •RDS(ON),VGS@10V,IDS@30A=9mΩ •RDS(ON),VGS@4.5V,IDS@30A=12mΩ •Advancedtrenchprocesstechnology •HighDensityCellDesignForUitraLowOn-Resistance •SpeciallyDesignedforDC/DCConvertersandMotorDrivers •FullyCharacterizedAvalancheVoltageandCurrent

PANJITPANJIT International Inc.

强茂強茂股份有限公司

A09N03

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

A09N03N

N-Channel30-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

B09N03

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

DTU09N03

N-Channel30V(D-S)MOSFETHalogen-free

DINTEK

DinTek Semiconductor Co,.Ltd

DTU09N03

Halogen-freeAccordingtoIEC61249-2-21

DINTEK

DinTek Semiconductor Co,.Ltd

详细参数

  • 型号:

    IPD09N03

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    OptiMOS 2 Power-Transistor

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
标准封装
9052
原厂渠道供应,大量现货,原型号开票。
询价
INFINEON
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
IR
23+
SOT-252
12300
全新原装真实库存含13点增值税票!
询价
INFINEON/英飞凌
2024+实力库存
TO252-3
237
只做原厂渠道 可追溯货源
询价
INFINEON/英飞凌
23+
TO252-3
23290
全新原装现货特价销售,欢迎来电查询
询价
INFINEON
07+
SOT-252
2390
询价
INT
17+
TO252
6200
100%原装正品现货
询价
INFINEON
23+
TO252
8653
全新原装优势
询价
INFINEON
23+
TO252
5000
原装正品,假一罚十
询价
INFINEON
2017+
TO252-3
26589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
更多IPD09N03供应商 更新时间2024-5-16 11:25:00