首页 >IPD082N10N3 G>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Idealforhigh-frequencyswitchingandsynchronousrectification •VDS=100V •ID(atVGS=10V)=80A •RDS(ON)(atVGS=10V) | UMWUMW Rightway Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司(简称UMW?) | UMW | ||
OptiMOS??Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-channel,normallevel | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
IPD082N10N3 G
- 功能描述：
MOSFET N-Channel MOSFET 20-200V
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
23+ |
540 |
原装现货,欢迎咨询 |
询价 | |||
INFINEO |
2020+ |
TO-252 |
2180 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
MICROCHI |
2020+ |
TO-252 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
英飞凌 |
报价为准 |
INF |
2500 |
国外订货7-10个工作日 |
询价 | ||
INFINEON |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Infineo |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INFINE0N |
20+ |
TO-252 |
90000 |
全新原装正品/库存充足 |
询价 | ||
INFINEON/英飞凌 |
22+ |
原厂原封 |
4875 |
只做原装 提供一站式配套供货 中利达 |
询价 | ||
英飞凌 |
21+ |
PG-TO252-3 |
6000 |
绝对原裝现货 |
询价 |
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