IRFS610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •3.3A,200V,RDS(on)=1.5Ω@VGS=10V •Lowgatecharge(typical7.2nC) •LowCrss(typical6.8pF) •Fastswitch

IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):1.185Ω(Typ.)

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):1.185Ω(Typ.)

IRL610A

iscN-ChannelMOSFETTransistor

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):

IRLI610A

iscN-ChannelMOSFETTransistor

IRLS610A

AdvancedPowerMOSFET

IRLS610A

iscN-ChannelMOSFETTransistor

IRLW610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):