丝印：330P10NM；Package：PG-TO263-3；OpriMOS power-Transistor,-100V

Fratures *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHs compliant *Halogen-free according to IEC61249-2-21

文件：1.80165 Mbytes 页数：11 Pages

INFINEON

英飞凌

OpriMOS power-Transistor,-100V

Fratures *P-channel *100% avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHs compliant *Halogen-free according to IEC61249-2-21

文件：1.80165 Mbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS ™ P 沟道 MOSFET 100V，采用 D²PAK 封装

\n优势:\n• Supports a wide variety of applications\n• Robust, reliable performance\n• Standard pinout allows for drop-in replacement\n• Increased security of supply;

Infineon

英飞凌

P-Channel MOSFET

FEATURES · Drain Current -ID= -62A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 33mΩ(Max)@VGS= -10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：354.52 Kbytes 页数：2 Pages

ISC

无锡固电

OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.9732 Mbytes 页数：11 Pages

INFINEON

英飞凌