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11N65C3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

ISPP11N65C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA11N65C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA11N65C3

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPA11N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N65C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPA11N65C3

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N65C3

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N65C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPI11N65C3

iscN-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N65C3

N-Channel650V(D-S)MOSFET

FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SPP11N65C3

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP11N65C3

CoolMOS??PowerTransistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)forta

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP11N65C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

SPP11N65C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
INFINEON
23+
TO-TO-220F
12300
全新原装真实库存含13点增值税票!
询价
INFINEON/英飞凌
23+
TO-220F
10000
公司只做原装正品
询价
Infineon/英飞凌
22+
TO-220F
6000
十年配单,只做原装
询价
Infineon/英飞凌
23+
TO-220F
6000
原装正品,支持实单
询价
INFINEON/英飞凌
22+
TO-220F
93948
终端免费提供样品 可开13%增值税发票
询价
INFINEON/英飞凌
22+
TO-220F
93948
询价
Infineon/英飞凌
22+
TO-220F
25000
只做原装进口现货,专注配单
询价
INFINEON-英飞凌
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
INFINEON/英飞凌
23+
TO-220F
8000
只做原装现货
询价
INFINEON/英飞凌
23+
TO220
50000
全新原装正品现货,支持订货
询价
更多IPA11N65C3供应商 更新时间2024-4-29 10:54:00