2A 充电 2.4A 放电移动电源 SOC

Injoinic

英集芯科技

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：125.28 Kbytes 页数：8 Pages

IRF

Advanced Process Technology

文件：738.7 Kbytes 页数：8 Pages

KERSEMI

P-Channel MOSFET Transistor

文件：334.13 Kbytes 页数：2 Pages

ISC

无锡固电