Information :
Samsung DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II
The K4S281632O is 134，217，728 bits synchronous high data rate Dynamic RAM
organized as 4 x 2，097，152 words by 16 bits， fabricated with SAMSUNG′s high
performance CMOS technology.
Range of operating frequencies， programmable burst length and_programmable
latencies allow the same device to be useful for a variety of high bandwidth， high
performance memory system applications.
? JEDEC standard 3.3V power supply
? RoHS compliant and_Halogen-Free package
? 133MHz (CL=3)， -40 to 85 °C
