NTD78N03
Power MOSFET
25 V, 78 A, Single N−Channel, DPAK
Features
• Low RDS(on)
• Optimized Gate Charge
• Pb−Free Packages are Available
Applications
• Desktop VCORE
• DC−DC Converters
• Low Side Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 25 V
Gate−to−Source Voltage VGS 20 V
Continuous Drain
Current (Note 1)
Steady
State
TC = 25°C ID 14.8 A
TC = 85°C 11.5
Power Dissipation
(Note 1)
TC = 25°C PD 2.3 W
Continuous Drain
Current (Note 2)
TC = 25°C ID 11.4 A
TC = 85°C 8.8
Power Dissipation
(Note 2)
TC = 25°C PD 1.4 W
Continuous Drain
Current (RJC)
TC = 25°C ID 78 A
TC = 85°C 56
Power Dissipation
(RJC)
TC = 25°C PD 64 W
Pulsed Drain Current tp = 10 s IDM 210 A
Current Limited by Package TA = 25°C IDmaxPkg 45 A
Drain to Source dV/dt dV/dt 8.0 V/ns
Operating Junction and Storage Temperature TJ, Tstg −55 to 175 °C
Source Current (Body Diode) IS 78 A
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 5.0 mH, IL(pk) = 17 A, RG = 25 )
EAS 722.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
TL 260 °C
THERMAL RESISTANCE
Junction−to−Case (Drain) RJC 1.95 °C/W
Junction−to−Ambient − Steady State (Note 1) RJA 65
Junction−to−Ambient − Steady State (Note 2) RJA 110
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
CASE
