Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 40W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
