丝印：INA819；Package：SOIC(D)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SOIC(D)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SOIC(D)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SOIC(D)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器

丝印：INA819；Package：SON(DRG)；INA819 35-μV Offset, 8-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features • Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 8 nV/√ Hz • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±60 V • Common-mode rejection: 110 dB, G = 10 (min

文件：2.95284 Mbytes 页数：51 Pages

TI

德州仪器