丝印：237I；Package：VSSOP；INA237 85-V, 16-Bit, Precision Power Monitor With I2C Interface

文件：2.60063 Mbytes 页数：45 Pages

TI

德州仪器

8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：69.14 Kbytes 页数：7 Pages

INTERSIL

Nanosecond Switching speeds

文件：48.41 Kbytes 页数：2 Pages

ISC

无锡固电

Pulse Transformer with Single Secondary Winding

文件：126.5 Kbytes 页数：4 Pages

SCHAFFNER

夏弗纳