| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2-FUNCTION,4-DIGITLCDAUTOMOTIVECLOCK-PROGRAMMABLE FEATURES ■DigitalTuningofCrystalFrequency ■PROMforStoringFrequencyCorrectionInformation ■12or24HourTimekeepingOption ■FlashingColon ■TwoSwitchesControlAllSettingFunctions ■HighNoiseImmunity ■InternalPower-UpResetCircuitry ■InternalVoltageRegulation | Allegro Allegro MicroSystems | Allegro | ||
HighCurrentChokes | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
Ultra-LowPowerAudioCODECforMobileDevices | REALTEKRealtek Semiconductor Corp 瑞昱瑞昱半导体公司 | REALTEK | ||
High-Current,High-PerformanceDrMOSPowerModule GeneralDescription TheAOZ5616QIisahighefficiencysynchronousbuck powerstagemoduleconsistingoftwoasymmetrical MOSFETsandanintegrateddriver.TheMOSFETsare individuallyoptimizedforoperationinthesynchronous buckconfiguration.TheHigh-SideMOSFETisoptimized toachieve | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
LowpowerNPNTransistor SMALLSIGNALNPNTRANSISTORS ■SILICONEPITAXIALPLANARPNPMEDIUMVOLTAGETRANSISTORS ■SOT-223PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THEPNPCOMPLEMENTARYTYPESAREBCP52-16ANDBCP53-16RESPECTIVELY APPLICATIONS ■MEDIUMVOLTAGELOADSWITCHTRANSISTORS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V&80V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features BVCEO>80V IC=1AHighContinuousCollectorCurrent ICM=2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features •BVCEO>45V,60V&80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
80VNPNMEDIUMPOWERTRANSISTORINSOT223 Features •BVCEO>80V •IC=1AHighContinuousCollectorCurrent •ICM=2APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
NPNmediumpowertransistor | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY |
详细参数
- 型号：
IN5616J
- 制造商：
Semtech Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MARVELL |
21+ |
dip |
40000 |
原包装原标现货,假一罚十, |
询价 | ||
MARVELL |
新批次 |
dip |
4326 |
询价 | |||
MARVELL |
24+ |
dip |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
ST |
09+ |
DO-35 |
40000 |
全新原装深圳现货库存,特价· |
询价 | ||
ST/意法 |
21+ |
DO-35 |
40000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
ST |
23+ |
直插 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ST |
23+ |
DO-35 |
54287 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
ST |
23+ |
DO-35 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
ST |
23+ |
DO-35 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
INTEGRAL |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
相关规格书
更多- IN5616JAN
- IN5616JTX
- IN5711
- IN5732
- IN5812
- IN5816
- IN5818
- IN5819-B
- IN5820BL01
- IN5822
- IN5851N
- IN5931BRL
- IN5V2A
- IN6052A
- IN6053A
- IN6092SX
- IN6104SX
- IN6146A
- IN6161A
- IN6161AJTXV
- IN6166
- IN6166JTX
- IN6166SX
- IN6289A
- IN6314JTX
- IN6335SX
- IN645-1JANTX
- IN646
- IN647
- IN6642
- IN689962
- IN7200
- IN7-3RD-RSMA
- IN7406
- IN7406N
- IN7407D
- IN74123
- IN74128
- IN74128N
- IN74180D
- IN7440
- IN7440N
- IN7472
- IN7472N
- IN74AC00
相关库存
更多- IN5616JANTXV
- IN5616JTXV
- IN5731C
- IN5811SX
- IN5814
- IN5817
- IN5819
- IN5820
- IN5821
- IN5851
- IN5929BRL
- IN5V1
- IN6045AJTX
- IN6052ASV
- IN6068A
- IN6104JX
- IN6118AJX
- IN6149A
- IN6161AJANTXV
- IN6161ASV
- IN6166JANTX
- IN6166JX
- IN6281/1.5KE27A
- IN6314JANTX
- IN6314SX
- IN645
- IN645A
- IN6461
- IN6521U
- IN6660TXV
- IN7100
- IN730ES
- IN7-3RD-SMA
- IN7406D
- IN7407
- IN7407N
- IN74123N
- IN74128D
- IN74180
- IN74180N
- IN7440D
- IN746A
- IN7472D
- IN749A
- IN74AC02
