IMZC120R012M2H中文资料CoolSiC ™ MOSFET 分立器件 1200 V G2，采用 TO-247 4 引脚高爬电距离封装数据手册Infineon规格书

特性 Features

• RDS(on)= 12 mΩ at VGS= 18 V, Tvj= 25°C
• Very low switching losses
• Wider max. VGSrange from -10 V to +25 V
• Overload operation up to Tvj= 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage 4.2 V
• Robust against parasitic turn on
• .XT interconnection technology
• Tighter VGS(th)parameter distribution

优势:
• Better energy efficiency
• Cooling optimization
• Higher power density
• New robustness features
• Highly reliable
• Easy paralleling