首页 >IMX327LQR-C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Precision,Rail-to-RailI/OINSTRUMENTATIONAMPLIFIER | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Precision,Rail-to-RailI/OINSTRUMENTATIONAMPLIFIER | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
1xMiniPCI-Eslot(mSATAcompatible) | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TOSHIBAInsulatedGateBipolarTransistorSiliconNChannelIGBTCurrentResonanceInverterSwitchingApplication CurrentResonanceInverterSwitchingApplication •Enhancementmodetype •Highspeed:tf=0.19µs(typ.)(IC=50A) •Lowsaturationvoltage:VCE(sat)=1.9V(typ.)(IC=50A) •FRDincludedbetweenemitterandcollector •FourthgenerationIGBT •TO-3P(N)(Toshibapackagename) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBAField-EffectTransistorSiliconP-ChannelMOSType(U-MOSVI) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
Field-EffectTransistorSiliconP-ChannelMOSType(U-MOS?? ○PowerManagementSwitchApplications •1.5-Vdrive •LowON-resistance:RDS(ON)=242mΩ(max)(@VGS=-1.5V) RDS(ON)=170mΩ(max)(@VGS=-1.8V) RDS(ON)=125mΩ(max)(@VGS=-2.5V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaTO-92;SOT54plasticpackage. NPNcomplement:JC337. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.driverandoutputstagesofaudioamplifiers. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
WideInput,3WSMTSingle&DualOutputDC/DCConverters | MPD MPD (Memory Protection Devices) | MPD |
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