TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.19 µs (typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) • FRD included between emitter and collector • Fourth generation IGBT • TO-3P(N) (Toshiba package name)

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TOSHIBA

东芝

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 242 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 170 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 125 mΩ (max) (@VGS = -2.5 V)

文件：192.52 Kbytes 页数：6 Pages

TOSHIBA

东芝

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：347.1 Kbytes 页数：6 Pages

NEC

瑞萨

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

文件：232.15 Kbytes 页数：6 Pages

TOSHIBA

东芝