首页 >IMX123LQT-C>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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3AMPPOSITIVEVOLTAGEREGULATORS FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS | SEME-LAB Seme LAB | SEME-LAB | ||
3AMPPOSITIVEVOLTAGEREGULATORS FEATURES •0.04/VLINEREGULATION •0.3/ALOADREGULATION •THERMALOVERLOADPROTECTION •SHORTCIRCUITPROTECTION •SAFEOPERATINGAREAPROTECTION •1TOLERANCE •START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT •AVAILABLEIN5V,12VAND15VOPTIONS | SEME-LAB Seme LAB | SEME-LAB | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪讯 | JDSU | ||
MiniatureIntegratedPowerMonitor | JDSUJDS Uniphase Corporation 捷迪讯 | JDSU | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRDs | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
NanosecondSwitchingSpeeds | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. •LowRDs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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