IMLT65R026M2H中文资料TOLT 中的 CoolSiC ™ MOSFET 650 V 结合了 CoolSiC ™ G2 的最佳性能和顶部冷却，以实现最高的系统功率密度。数据手册Infineon规格书

描述 Description

The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.

特性 Features

• Excellent figures of merit (FOMs)
• High robustness and overall quality
• Flexible driving voltage range
• Support for unipolar driving (VGS_off=0)
• Lower thermal resistance
• Improved package interconnect with .XT
• Top-side cooling package

优势:
• Enables BOM savings
• Maximizes the system performance per $
• Highest reliability
• Enables top efficiency and power density
• Simplifies assembly and cooling
• Liquid cooling \"ready\"
• Allows designs without fan or heatsink
• Lower stray inductances
• Better gate control