丝印：65R026M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.20399 Mbytes 页数：19 Pages

INFINEON

英飞凌

TOLT 中的 CoolSiC ™ MOSFET 650 V 结合了 CoolSiC ™ G2 的最佳性能和顶部冷却，以实现最高的系统功率密度。

The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top- • Excellent figures of merit (FOMs)\n• High robustness and overall quality\n• Flexible driving voltage range\n• Support for unipolar driving (VGS_off=0)\n• Lower thermal resistance\n• Improved package interconnect with .XT\n• Top-side cooling package\n\n优势:\n• Enables BOM savings\n• Maximizes the sy;

Infineon

英飞凌

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.3649 Mbytes 页数：18 Pages

INFINEON

英飞凌

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：936.7 Kbytes 页数：16 Pages

INFINEON

英飞凌

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.14619 Mbytes 页数：17 Pages

INFINEON

英飞凌