IMCQ120R078M2H数据手册Infineon中文资料规格书

描述 Description

The CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package have been specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

特性 Features

• VDSS= 1200 V @Tvj= 25°C
• IDDC= 181 A @TC= 100°C
• RDS(on)= 7.5 mΩ @VGS= 18 V, Tvj= 25°C
• Very low switching losses
• Overload operation up to Tvj= 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage
• Robust against parasitic turn on
• Robust body diode for hard commutation
• .XT interconnection technology

优势:
• Outstanding thermal performance
• Increases energy efficiency
• Higher power density
• More compact and easier designs
• Lower TCO cost or BOM cost