SiC MOSFET in compact SMD package

\n优势:\n• High performance, high reliability and ease of use\n• Enable high system efficiency and power density\n• Reduces system cost and complexity\n• Enable cheaper, simpler and smaller systems\n• Works in topologies with continuous hard commutation\n• Fit for high temperature and harsh operations;

Infineon

英飞凌

丝印：65R057M1；Package：PG-TO263-7-12；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.56363 Mbytes 页数：15 Pages

Infineon

英飞凌

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SILICON CARBIDE MOSFET PG-TO263-

Infineon

英飞凌

MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.49939 Mbytes 页数：15 Pages

Infineon

英飞凌

650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.37815 Mbytes 页数：15 Pages

Infineon

英飞凌

650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.39359 Mbytes 页数：15 Pages

Infineon

英飞凌