首页 >ILD233T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
High-SideorLow-SideMeasurement,BidirectionalCurrentandPowerMonitorWithI2C-,SMBus-,andPMBus-CompatibleInterface | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
HighPower,HighSpeedApplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP |
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