ILD03N60中文资料下载批发供应英飞凌-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
ILD03N60	文件：330.78 Kbytes Page：15 Pages	LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is 文件：330.78 Kbytes 页数：15 Pages	Infineon 英飞凌	Infineon
ILP03N60	文件：330.78 Kbytes Page：15 Pages	LightMOS Power Transistor LightMOS Power Transistor • New high voltage technology designed for ZVS-switching in lamp ballasts • IGBT with integrated reverse diode • 4A current rating for reverse diode • Up to 10 times lower gate capacitance than MOSFET • Avalanche rated • 150°C operating temperature • FullPak is 文件：330.78 Kbytes 页数：15 Pages	Infineon 英飞凌	Infineon
MJU03N60CT	文件：275.7 Kbytes Page：7 Pages	600V Super Junction Power MOSFET 文件：275.7 Kbytes 页数：7 Pages	CITC 竹懋科技	CITC
NDD03N60Z	文件：167.82 Kbytes Page：10 Pages	N-Channel Power MOSFET 600 V, 3.3 文件：167.82 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI

更多ILD03N60供应商更新时间2025-12-12 10:50:00