MDP15N60G

N-ChannelMOSFET600V,15A,0.40(ohm)

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MDP15N60GTH

N-ChannelMOSFET600V,15A,0.40(ohm)

MDP15N60GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat

MGP15N60U

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficien

MS15N60

N-ChannelEnhancementModePowerMOSFET

MSB15N60

N-ChannelEnhancementModePowerMOSFET

MSF15N60

N-ChannelEnhancementModePowerMOSFET

NGTB15N60EG

IGBT-Short-CircuitRated