650 V、40 A IGBT，带反并联二极管，采用 TO-263 封装

Infineon’s 650 V, 40 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package copacked with full rated current Rapid 1 anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakth • 650 V breakthrough voltage\nCompared to Infineon’s HighSpeed 3 family\n • Factor 2.5 lower Qg\n• Factor 2 reduction in switching losses\n• 200 mV reduction in VCEsat\n• Co-packed with Infineon’s new Rapid Si-diode technology\n• Low COES/EOSS\n• Mild positive temperature coefficient VCEsat\n• Tempe;

Infineon

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High speed switching series 5th generation

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Infineon

英飞凌

INFINEO
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