IKB30N65EH5中文资料650 V、30 A IGBT，带反并联二极管，采用 TO-263 封装数据手册Infineon规格书

描述 Description

The 650 V, 30 A high speed switching TRENCHSTOP™ 5 in D2Pak (TO263) package copacked with full rated current Rapid 1 anti parallel diode, redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow. 

特性 Features

• 650 V breakthrough voltage
Compared to Infineon’s HighSpeed 3 family

• Factor 2.5 lower Qg
• Factor 2 reduction in switching losses
• 200 mV reduction in VCEsat
• Co-packed with Infineon’s new Rapid Si-diode technology
• Low COES/EOSS
• Mild positive temperature coefficient VCEsat
• Temperature stability of Vf

优势:
• Best-in-class efficiency, resulting in lower junction and  case temperature leading to higher device reliability
• 50 V increase in the bus voltage possible without compromising  reliability
• Higher power density design