丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

DESCRIPTION • High DC Current Gain-hFE= 750(Min)@ IC= 15A • High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low speed s

文件：336.29 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET

Power MOSFET

文件：257.69 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switch

文件：235.01 Kbytes 页数：9 Pages

IRF

Control MOSFET of Sync-Buck Converters used for Notebook Processor Power

文件：235.01 Kbytes 页数：9 Pages

IRF