isc P-Channel MOSFET Transistor

文件：327.49 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFET

FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE

文件：22.16 Kbytes 页数：2 Pages

SEME-LAB

TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.2ohm, Id=-18A)

Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reve

文件：148.2 Kbytes 页数：7 Pages

IRF

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星