N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤340mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.55 Kbytes 页数：2 Pages

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无锡固电

CoolMOS Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO220 Fullpak • Ultra low gate charge CoolMOS™ 900V is designed for:

文件：273.07 Kbytes 页数：10 Pages

Infineon

英飞凌

Isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F Package • Drain Source Voltage- : VDSS=900V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.34Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applicati

文件：270.24 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS??Power Transistor

Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for industrial applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge

文件：917.2 Kbytes 页数：10 Pages

Infineon

英飞凌