丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Very high commutation ruggedness • FEATURES • Static drain-source on-resistance: RDS(on)≤0.38Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.47 Kbytes 页数：2 Pages

ISC

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N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device

文件：338.78 Kbytes 页数：2 Pages

ISC

无锡固电

650V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：1.9041 Mbytes 页数：17 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.97976 Mbytes 页数：17 Pages

Infineon

英飞凌