丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Suitable for hard and soft switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.18Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.99 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Combines the experience of the leading SJ MOSFET supplier with high class innovation • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.18Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust devic

文件：338.76 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤180mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

Features •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)

文件：1.14682 Mbytes 页数：15 Pages

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