丝印：DPAK；Package：T0-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤399mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

文件：339.15 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High Peak Current Capability • FEATURES • Static drain-source on-resistance: RDS(on)≤399mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.34 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOSTM Power Transistor

Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC0) for target applications CoolMOS CP is designed for: • Hard and softswitching SMPS topologies • DC

文件：291.82 Kbytes 页数：10 Pages

Infineon

英飞凌