IHW30N140R5L

丝印：H30QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features •VCE=1400V •IC=30A •Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly •Verytightparameterdistribution •Highruggedness,temperaturestablebehavior •VerylowVCEsat •Easyparallelingcapabilityduetopositivetemperaturecoe

IHW30N140R5L

Reverse-Conducting IGBT

DESCRIPTION ·Highruggedness,temperaturestablebehavior ·VerylowVCEsat ·Easyparallelingcapabilityduetopositive temperaturecoefficientinVCEsat ·LowEMI APPLICATIONS ·Inductioncooker ·Microwaveovens

IHW30N140R5L

IGBT 单管; \n优势:\n• Lower power losses in application\n• Lower device stress in cookware\n• High energy efficiency\n• Higher system power capability\n• Better robustness and reliability\n• Preferred design flexibility\n• Narrow power losses distribution\n• Advanced thermal performance\n;

IIM-42352

INVENSENSE
N/A

INVENSENSE

IK31301-L

IKANOS
BGA